FLEXIBLE WORD LINE BOOSTING ACROSS VCC SUPPLY

Systems and methods for producing a boosted voltage which can be used as a boosted word line voltage for read mode operations of memory cells are disclosed. The system contains a VCC comparator, a look up table, and a boosting circuit including a set of boosting capacitors. The look up table has a list of trim codes that indicates desired boosting ratios. The boosting ratio can vary depending on a level of a supply voltage to provide a sufficient word line voltage, thereby preventing and/or mitigating delay in reading operations. The number of the capacitors in the boosting circuit can be predetermined to be turned on or off according to the trim code. Accordingly, the voltage boost circuit provides a sufficient boosted word line voltage to a core cell gate with flexibility despite fluctuation of the supply voltage level.