MOS transistor and method of forming the MOS transistor with a SiON etch stop layer that protects the transistor from PID and hot carrier degradation

MOS transistor and method of forming the MOS transistor with a SiON etch stop layer that protects the transistor from PID and hot carrier degradation

A MOS transistor is formed with a dual-layer silicon oxynitride (SiON) etch stop film that protects the transistor from plasma induced damage (PID) and hot carrier degradation, thereby improving the reliability of the transistors. The first SiON layer is formed with SiH4 at a first flow rate, and th...

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Bibliographische Detailangaben
Hauptverfasser: BRISBIN DOUGLAS, CHAPARALA PRASAD, O'CONNELL DENIS FINBARR, DRIZLIKH SERGEI, MCCULLOH HEATHER
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A MOS transistor is formed with a dual-layer silicon oxynitride (SiON) etch stop film that protects the transistor from plasma induced damage (PID) and hot carrier degradation, thereby improving the reliability of the transistors. The first SiON layer is formed with SiH4 at a first flow rate, and the second SiON layer is formed with SiH4 at a second higher flow rate.