Tellurium (Te) Precursors for Making Phase Change Memory Materials

Tellurium (Te) Precursors for Making Phase Change Memory Materials

Tellurium (Te)-containing precursors, Te containing chalcogenide phase change materials are disclosed in the specification. A method of making Te containing chalcogenide phase change materials using ALD, CVD or cyclic CVD process is also disclosed in the specification in which at least one of the di...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: XIAO MANCHAO, GAFFNEY THOMAS RICHARD
Format: Patent
Sprache:eng
Schlagworte:
ACYCLIC OR CARBOCYCLIC COMPOUNDS
BASIC ELECTRIC ELEMENTS
CHEMISTRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
ORGANIC CHEMISTRY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Tellurium (Te)-containing precursors, Te containing chalcogenide phase change materials are disclosed in the specification. A method of making Te containing chalcogenide phase change materials using ALD, CVD or cyclic CVD process is also disclosed in the specification in which at least one of the disclosed tellurium (Te)-containing precursors is introduced to the process.