SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

The present invention includes: a semiconductor element 1 including a circuit forming portion 11 formed on a central region of a principal surface of the semiconductor element 1 and a plurality of electrode pads 8 arranged on the principal surface outside the circuit forming portion 11; an interpose...

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Bibliographische Detailangaben
1. Verfasser: FUNAKOSHI MASASHI
Format: Patent
Sprache:eng
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Zusammenfassung:The present invention includes: a semiconductor element 1 including a circuit forming portion 11 formed on a central region of a principal surface of the semiconductor element 1 and a plurality of electrode pads 8 arranged on the principal surface outside the circuit forming portion 11; an interposer 3 on which the semiconductor element 1 is mounted, terminals 9 arranged on the interposer 3, thin metal wires for electrically connecting the electrode pads 8 and the terminals 9; and a sealing insulator for sealing the semiconductor element 1 and the thin metal wires 5. The present invention further includes a protective sheet 2 formed on the principal surface of the semiconductor element 1 so as to cover the circuit forming portion 11 and at least some of the plurality of electrodes pads 8. With this configuration, it is possible to provide a semiconductor device in which a stress applied to the semiconductor element can be reduced and the adhesion between the interposer and the semiconductor element can be improved.