PLASMA ETCHING METHOD AND STORAGE MEDIUM

A plasma etching method that can prevent residues from becoming attached to bottoms and sides of via holes and trenches. An interlayer insulation film formed of CwFx (x and w are predetermined natural numbers) and a metallic layer or a metal-containing layer formed on a substrate are exposed at the...

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Bibliographische Detailangaben
Hauptverfasser:	HOSHI NAOTSUGU, KOBAYASHI NORIYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A plasma etching method that can prevent residues from becoming attached to bottoms and sides of via holes and trenches. An interlayer insulation film formed of CwFx (x and w are predetermined natural numbers) and a metallic layer or a metal-containing layer formed on a substrate are exposed at the same time to plasma generated from a process gas. The process gas is a mixed gas including CyFz (y and z are predetermined natural numbers) gas and N2 gas, and the flow rate of the N2 gas in the process gas is higher than the flow rate of the CyFz gas.