NONVOLATILE MEMORY DEVICES THAT INCLUDE AN INSULATING FILM WITH NANOCRYSTALS EMBEDDED THEREIN AND METHODS OF MANUFACTURING THE SAME

NONVOLATILE MEMORY DEVICES THAT INCLUDE AN INSULATING FILM WITH NANOCRYSTALS EMBEDDED THEREIN AND METHODS OF MANUFACTURING THE SAME

A nonvolatile memory device includes a semiconductor substrate, a charge-trap structure disposed on the semiconductor substrate, which includes an insulating film and a plurality of carbon nanocrystals embedded in the insulating film, and a gate disposed on the charge-trap structure. The nonvolatile...

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Bibliographische Detailangaben
Hauptverfasser: KIM HEE-SUNG, KANG TAE-SOO, CHO KYOOUL, CHOI JUNG-SIK, CHOI SAM-JONG, LEE YOON-HEE
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A nonvolatile memory device includes a semiconductor substrate, a charge-trap structure disposed on the semiconductor substrate, which includes an insulating film and a plurality of carbon nanocrystals embedded in the insulating film, and a gate disposed on the charge-trap structure. The nonvolatile memory device may exhibit memory hysteresis characteristics with improved reliability.