METHOD OF FORMING A DUAL-DAMASCENE STRUCTURE USING AN UNDERLAYER

METHOD OF FORMING A DUAL-DAMASCENE STRUCTURE USING AN UNDERLAYER

A method of forming a dual-damascene wire. The method includes forming a via opening in a dielectric layer, filling the via opening with a polymeric formation including at least about 6% by weight of solids of thermal acid generator; heating the polymeric underlayer to a temperature greater than roo...

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Bibliographische Detailangaben
Hauptverfasser: COLBURN MATTHEW EARL, MEDEIROS DAVID R, BURNS SEAN DAVID, PATEL KAUSHAL, VYKLICKY LIBOR, LUSTIG NAFTALI ELIAHU
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A method of forming a dual-damascene wire. The method includes forming a via opening in a dielectric layer, filling the via opening with a polymeric formation including at least about 6% by weight of solids of thermal acid generator; heating the polymeric underlayer to a temperature greater than room temperature but less than about 180° C.; lithographically forming a trench in the dielectric layer and filling the via opening and the trench with an electrical conductor, a top surface of the electrical conductor substantially co-planer with the top surface of the second dielectric capping layer.