Methods of forming a blocking pattern using a photosensitive composition and methods of manufacturing a semiconductor device

A method of forming a blocking pattern includes forming a preliminary blocking layer on first and second regions of a substrate, the preliminary blocking layer being formed of a photosensitive composition including a siloxane polymer, a cross-linking agent, a photoacid generator, and a thermal acid...

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Bibliographische Detailangaben
Hauptverfasser: CHOI NAM-UK, KANG KYONG-RIM, KIM YOUNG-HO, AHN SUN-YUL, KIM JAE-HYUN
Format: Patent
Sprache:eng
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Zusammenfassung:A method of forming a blocking pattern includes forming a preliminary blocking layer on first and second regions of a substrate, the preliminary blocking layer being formed of a photosensitive composition including a siloxane polymer, a cross-linking agent, a photoacid generator, and a thermal acid generator, selectively exposing to light a first portion of the preliminary blocking layer, the first portion of the preliminary blocking layer being formed on the first region of the substrate, such that a cross-linked pattern is formed on the first region of the substrate, and removing a second portion of the preliminary blocking layer, the second portion of the preliminary blocking layer being formed on the second region of the substrate.