METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A substrate having a copper wiring is prepared. An insulating film is formed on the copper wiring. The insulating film is etched with a gas containing fluorine to form an opening reaching the copper wiring. A plasma treatment is carried out on a surface of copper exposed at a bottom of the opening w...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A substrate having a copper wiring is prepared. An insulating film is formed on the copper wiring. The insulating film is etched with a gas containing fluorine to form an opening reaching the copper wiring. A plasma treatment is carried out on a surface of copper exposed at a bottom of the opening without turning plasma discharge of f after forming the opening in the same chamber as the formation of the opening. |
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