Power Semiconductor Module And Method of Manufacturing the Power Semiconductor Module

A power semiconductor module has a silicon nitride insulated substrate, a metal circuit plate made of Cu or a Cu alloy, which is disposed on one surface of the silicon nitride insulated substrate, a semiconductor chip mounted on the metal circuit plate, and a heat dissipating plate made of Cu or a Cu alloy, which is disposed on the other surface of the silicon nitride insulated substrate; a carbon fiber-metal composite made of carbon fiber and Cu or a Cu alloy is provided between the silicon nitride insulated substrate and the metal circuit plate; the thermal conductivity of the carbon fiber-metal composite in a direction in which carbon fiber of the carbon fiber-metal composite is oriented is 400 W/m.k or more. Accordingly, a power semiconductor module that has a low thermal resistance between the semiconductor chip and a heat dissipating mechanism and also has improved cooling capacity is provided.