METAL-GERMANIUM PHYSICAL VAPOR DEPOSITION FOR SEMICONDUCTOR DEVICE DEFECT REDUCTION

METAL-GERMANIUM PHYSICAL VAPOR DEPOSITION FOR SEMICONDUCTOR DEVICE DEFECT REDUCTION

The present invention provides a method of manufacturing a metal silicide electrode (100) for a semiconductor device (110). The method comprises depositing by physical vapor deposition, germanium atoms (120) and transition metal atoms (130) to form a metal-germanium alloy layer (140) on a semiconduc...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: MERCER DOUGLAS E, RUSSELL NOEL, CHEN PEIJUN J, YUE DOUFENG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The present invention provides a method of manufacturing a metal silicide electrode (100) for a semiconductor device (110). The method comprises depositing by physical vapor deposition, germanium atoms (120) and transition metal atoms (130) to form a metal-germanium alloy layer (140) on a semiconductor substrate (150). The metal-germanium alloy layer and the semiconductor substrate are reacted to form a metal silicide electrode. Other aspects of the present invention include a method of manufacturing an integrated circuit (400).