STRUCTURE FOR STOCHASTIC INTEGRATED CIRCUIT PERSONALIZATION

STRUCTURE FOR STOCHASTIC INTEGRATED CIRCUIT PERSONALIZATION

A method of forming a stochastically based integrated circuit encryption structure includes forming a lower conductive layer over a substrate, forming a short prevention layer over the lower conductive layer, forming an intermediate layer over the short prevention layer, wherein the intermediate lay...

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Bibliographische Detailangaben
Hauptverfasser: GAIDIS MICHAEL C, WONG KEITH KWONG HON, RADENS CARL, HSU LOUIS L. C, CLEVENGER LAWRENCE A, COLBURN MATTHEW E, DALTON TIMOTHY J, YANG CHIHAO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A method of forming a stochastically based integrated circuit encryption structure includes forming a lower conductive layer over a substrate, forming a short prevention layer over the lower conductive layer, forming an intermediate layer over the short prevention layer, wherein the intermediate layer is characterized by randomly structured nanopore features. An upper conductive layer is formed over the random nanopore structured intermediate layer. The upper conductive layer is patterned into an array of individual cells, wherein a measurable electrical parameter of the individual cells has a random distribution from cell to cell with respect to a reference value of the electrical parameter.