Method for fabricating semiconductor device installed with passive components

A method for fabricating a semiconductor device installed with passive components is provided. The method includes: having at least a passive component make a bridge connection between a ground circuit and a power circuit of each of a plurality of substrate units; electrically connecting a conductive circuit on a cutting path between substrate units to the ground circuit and the power circuit, and forming a short circuit loop; or electrically connecting the conductive circuit on the cutting path between the substrate units to the power circuit and the ground circuit via bonding wires, and forming a short circuit loop; or applying a wire bonding machine to form a stud bump on the power circuit, and then forming a short circuit loop via the power circuit and ground loop of the wire bonding machine; therefore, via the short circuit loop, the passive component is capable of releasing electricity filled therein from previous plasma clean process of substrate units and chips; and grounding the chips and the substrate units and electrically connecting powers and signals to prevent the chips from being damaged due to sudden current impulses resulting from the discharging of the passive components when the passive components are electrically connected to the chips.