Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

The semiconductor device comprises a silicon wafer 10 , a multilayer interconnection 12 buried in inter-layer insulation film formed on the upper surface of the silicon wafer 10 , and a silicon nitride film 16 b which is formed on the back surface of the silicon wafer 10 and is an insulation film ha...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HAYAMI YUKA, OKOSHI KATSUAKI, SAIKI TAKASHI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The semiconductor device comprises a silicon wafer 10 , a multilayer interconnection 12 buried in inter-layer insulation film formed on the upper surface of the silicon wafer 10 , and a silicon nitride film 16 b which is formed on the back surface of the silicon wafer 10 and is an insulation film having a tensile stress, relaxing a stress exerted to the silicon wafer 10 by the inter-layer insulation films in which the multilayer interconnection 12 is buried.