MAGNETIC SENSING ELEMENT

At both sides of an element portion, a first hard bias layer having a higher residual magnetization Mr and a second hard bias layer having a higher coercive force Hc are deposited in that order from the bottom with one end of the first hard bias layer being closed close to a free magnetic layer. A f...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ISHIZONE MASAHIKO, HAYAKAWA YASUO
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER PHYSICS
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