MAGNETIC SENSING ELEMENT

MAGNETIC SENSING ELEMENT

At both sides of an element portion, a first hard bias layer having a higher residual magnetization Mr and a second hard bias layer having a higher coercive force Hc are deposited in that order from the bottom with one end of the first hard bias layer being closed close to a free magnetic layer. A f...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ISHIZONE MASAHIKO, HAYAKAWA YASUO
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
PHYSICS
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Beschreibung
Zusammenfassung:At both sides of an element portion, a first hard bias layer having a higher residual magnetization Mr and a second hard bias layer having a higher coercive force Hc are deposited in that order from the bottom with one end of the first hard bias layer being closed close to a free magnetic layer. A film thickness ratio of the first hard bias layer in a whole hard bias layer is from 35% to 75%. This stabilizes magnetization in the free magnetic layer to reduce asymmetry, thus enabling improvement in stability of reproducing characteristics including noise suppression.