Stop mechanism for trench reshaping process
An opening, such as a trench, on a semiconductor substrate is annealed to smooth edges and corners of the opening. The anneal causes reflow of the material forming the walls of the opening, thereby smoothing out the edges and corners of the opening. After a desired amount of reflow is accomplished,...
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| Sprache: | eng |
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| Zusammenfassung: | An opening, such as a trench, on a semiconductor substrate is annealed to smooth edges and corners of the opening. The anneal causes reflow of the material forming the walls of the opening, thereby smoothing out the edges and corners of the opening. After a desired amount of reflow is accomplished, the substrate is exposed to an oxidant such as O2 or H2O. The oxidant stops the reflow, thereby preventing undesired excess movement of material. |
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