Semiconductor memory device and defect remedying method thereof

Semiconductor memory device and defect remedying method thereof

A semiconductor memory device formed on a semiconductor chip includes first memory arrays, a plurality of second memory arrays, a first voltage generator, and first bonding pads. The semiconductor chip is divided into first, second and third rectangle regions and the third rectangle region is arrang...

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Hauptverfasser: TAKANO MITSUHIRO, KUMATA ATSUSHI, MIYAMOTO EIJI, YAMAZAKI TAKASHI, OSHIMA KAZUYOSHI, UDO SHINJI, YOSHIOKA HIROSHI, KASAMA YASUHIRO, MIYAZAWA KAZUYUKI, MIYATAKE SINICHI, HORI RYOICHI, SAKAI YUJI, ENDO AKIRA, HORIGUCHI MASASHI, KAJIGAYA KAZUHIKO, SAITO HIROKAZU, TSUNOZAKI MANABU, MORINO MAKOTO, IKENAGA SHINICHI, MATSUMOTO TETSUROU, YAMAGUCHI YASUNORI, ETOH JUN, SAWADA JIRO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:A semiconductor memory device formed on a semiconductor chip includes first memory arrays, a plurality of second memory arrays, a first voltage generator, and first bonding pads. The semiconductor chip is divided into first, second and third rectangle regions and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The first memory arrays are formed in the first rectangle region. The second memory arrays are formed in the second rectangle region. The voltage generator and first bonding pads are arranged in the third rectangle region. The first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the second memory arrays.