Semiconductor Device With An Image Sensor And Method For The Manufacture Of Such A Device

The invention relates to a semiconductor device with a semiconductor body ( 12 ) with an image sensor comprising a two-dimensional matrix of pixels ( 1 ) each comprising a radiation-sensitive element ( 2 ) with a charge accumulating semiconductor region ( 2 A) and coupled to a number of MOS field effect transistors ( 3 ), in which in the semiconductor body ( 12 ) an isolation region ( 4 ) is sunken for the separation of neighboring pixels ( 1 ) underneath which a further semiconductor region ( 5 ) with an enlarged doping concentration is formed. According to the invention the further semiconductor region ( 5 ) is sunken in the surface of the semiconductor body ( 12 ) and wider than the isolation region ( 4 ). Preferably the isolation region ( 4 ) is merely located there where a radiation sensitive element ( 2 ) borders on the MOS transistors ( 3 ) of a neighboring pixel ( 1 ) and there where two neighboring pixels ( 1 ) border on each other with their radiation sensitive elements ( 2 ) another sunken semiconductor region ( 6 ) with an enlarged doping concentration is located. Such a device ( 10 ) has a low leakage current and a large radiation sensitivity and charge storage capacity.