SINGLE CRYSTAL PULLING APPARATUS

A single crystal pulling apparatus having a heater 4 melting material silicon by thermal radiation from a cylindrical exothermic part 4 a which surrounds a crucible 3 inside a furnace body 2 and an electromagnet 13 which is prepared to surround the furnace body 2 and applies a transverse magnetic fi...

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Bibliographische Detailangaben
1. Verfasser:	HISAICHI TOSHIO
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A single crystal pulling apparatus having a heater 4 melting material silicon by thermal radiation from a cylindrical exothermic part 4 a which surrounds a crucible 3 inside a furnace body 2 and an electromagnet 13 which is prepared to surround the furnace body 2 and applies a transverse magnetic field to the silicon liquid melt in the crucible 3 is provided. A length h in a pull-up axis direction in the exothermic part 4 a of the heater 4 is arranged to be 0.5 times to 0.9 times an inner diameter of the crucible 3, a first middle position in the pull-up axis direction in the exothermic part 4 a is arranged below a second middle position in the pull-up axis direction in the electromagent 13, and a distance difference d between the first and second middle positions is 0.15 times to 0.55 times the inner diameter R of the crucible 3.