REDUCTION OF LINE EDGE ROUGHNESS BY CHEMICAL MECHANICAL POLISHING

The present invention describes a method including: providing a wafer; applying a photoresist over the wafer; forming a first set of features in the photoresist; etching a hard mask below the photoresist to form a second set of features in the hard mask; removing the photoresist; etching a polysilic...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	BARNS CHRIS E, BRISTOL ROBERT L
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GRINDING HOLOGRAPHY LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS THEREFOR ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS POLISHING SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TRANSPORTING
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Beschreibung
Zusammenfassung:	The present invention describes a method including: providing a wafer; applying a photoresist over the wafer; forming a first set of features in the photoresist; etching a hard mask below the photoresist to form a second set of features in the hard mask; removing the photoresist; etching a polysilicon below the hardmask to form a third set of features in the polysilicon; removing the hard mask; and reducing a line edge roughness in the third set of features.