Plasma etch process for controlling line edge roughness

Line edge smoothness in a hardmask etch process is improved by widening the chamber pressure process window by applying VHF power and increasing the chamber pressure to near the maximum value of the widened process window.

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Bibliographische Detailangaben
Hauptverfasser:	TODOROW VALENTIN N, BELEN RODOLFO P, PATERSON ALEXANDER M, PANAGOPOULOS THEODOROS, HAMMOND EDWARD P, HATCHER BRIAN K, KATZ DAN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DECORATIVE ARTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MOSAICS PAPERHANGING PERFORMING OPERATIONS PRODUCING DECORATIVE EFFECTS SEMICONDUCTOR DEVICES TARSIA WORK TRANSPORTING
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Beschreibung
Zusammenfassung:	Line edge smoothness in a hardmask etch process is improved by widening the chamber pressure process window by applying VHF power and increasing the chamber pressure to near the maximum value of the widened process window.