Method of depositing copper using physical vapor deposition

Method of depositing copper using physical vapor deposition

The present method of forming an electronic structure includes providing a tantalum base layer and depositing a layer of copper on the tantalum layer, the deposition being undertaken by physical vapor deposition with the temperature of the base layer at 50° C. or less, with the deposition taking pla...

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Hauptverfasser: ROBIE STEPHEN B, ROMERO JEREMIAS D, YU WEN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator ROBIE STEPHEN B
ROMERO JEREMIAS D
YU WEN
description The present method of forming an electronic structure includes providing a tantalum base layer and depositing a layer of copper on the tantalum layer, the deposition being undertaken by physical vapor deposition with the temperature of the base layer at 50° C. or less, with the deposition taking place at a power level of 300 W or less.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method of depositing copper using physical vapor deposition
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