Method and semiconductor structure for reliability characterization

According to one exemplary embodiment, a method for characterizing a reliability of a semiconductor structure includes forming a recess in a first dielectric layer in the semiconductor structure; filling the recess with a sacrificial material; removing the sacrificial material thereby causing an int...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: WANG FEI, BLISH RICHARD C, ZHAI JUN
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:According to one exemplary embodiment, a method for characterizing a reliability of a semiconductor structure includes forming a recess in a first dielectric layer in the semiconductor structure; filling the recess with a sacrificial material; removing the sacrificial material thereby causing an intentional defect with known characteristics to aid in a characterizing the reliability of the semiconductor structure.