SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

A semiconductor device including a copper layer, an aluminum containing layer, and a barrier metal layer having a laminated structure of a titanium layer and a titanium oxide layer formed between the copper layer and the aluminum containing layer.

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Bibliographische Detailangaben
Hauptverfasser: KATATA TOMIO, WADA JUNICHI, FUKUHARA JOTA, HATAZAKI AKITSUGU
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device including a copper layer, an aluminum containing layer, and a barrier metal layer having a laminated structure of a titanium layer and a titanium oxide layer formed between the copper layer and the aluminum containing layer.