Schottky barrier semiconductor device
The present invention provides a Schottky barrier semiconductor device having a semiconductor substrate 101 , a low-concentration semiconductor layer 102 , trenches 103 formed in the low-concentration semiconductor layer 102 and extending to the semiconductor substrate 101 , and a mesa portion 102 a...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The present invention provides a Schottky barrier semiconductor device having a semiconductor substrate 101 , a low-concentration semiconductor layer 102 , trenches 103 formed in the low-concentration semiconductor layer 102 and extending to the semiconductor substrate 101 , and a mesa portion 102 a formed between the trenches 103 . This provides a high durability against a surge or transient voltage. |
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