Method and Apparatus for Maximizing Cooling for Wafer Processing

Methods for processing wafers, wafer processing apparatus, micro-fluid ejection head substrates, and etching process are provided. One such method includes applying a clamping voltage to an electrostatic chuck sufficient to hold a wafer in a substantially planerized orientation adjacent to the elect...

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Bibliographische Detailangaben
Hauptverfasser:	WARNER RICHARD LEE, MCNEES ANDREW LEE, DRYER PAUL WILLIAM, KRAWCZYK JOHN WILLIAM, PATIL GIRISH SHIVAJI, BERNARD DAVID LAURIER
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GLASS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL JOINING GLASS TO GLASS OR OTHER MATERIALS METALLURGY MINERAL OR SLAG WOOL MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS
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Beschreibung
Zusammenfassung:	Methods for processing wafers, wafer processing apparatus, micro-fluid ejection head substrates, and etching process are provided. One such method includes applying a clamping voltage to an electrostatic chuck sufficient to hold a wafer in a substantially planerized orientation adjacent to the electrostatic chuck. A heat transfer fluid flows through a three dimensional space between the wafer and the electrostatic chuck to cool the wafer by convective heat transfer during wafer processing.