Hard mask for low-k interlayer dielectric patterning

Hard mask for low-k interlayer dielectric patterning

Described herein are embodiments of a hard mask including a surface to reduce adhesion to an anti-reflective material deposited on a surface, wherein the surface to reduced adhesion provides use of a process to remove the anti-reflective material deposited on the surface that minimizes damage to an...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: MULE TONY V, ABDELRAHMAN MAGDY S
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Described herein are embodiments of a hard mask including a surface to reduce adhesion to an anti-reflective material deposited on a surface, wherein the surface to reduced adhesion provides use of a process to remove the anti-reflective material deposited on the surface that minimizes damage to an interlayer dielectric layer below the hard mask and methods of manufacturing the same.