MICROPIPE-FREE SILICON CARBIDE AND RELATED METHOD OF MANUFACTURE

MICROPIPE-FREE SILICON CARBIDE AND RELATED METHOD OF MANUFACTURE

Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system includin...

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Hauptverfasser: BASCERI CEM, BALAKRISHNA VIJAY, KHLEBNIKOV IGOR, HOBGOOD HUDSON M, LEONARD ROBERT T, SILAN MURAT N, POWELL ADRIAN R, CARTER CALVIN H.JR, BALKAS CENGIZ, TSVETKOV VALERI T, KHLEBNIKOV YURI, JENNY JASON R
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
CHEMISTRY
COMPOUNDS THEREOF
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INORGANIC CHEMISTRY
LAYERED PRODUCTS
LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
METALLURGY
NON-METALLIC ELEMENTS
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
TRANSPORTING
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Beschreibung
Zusammenfassung:Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material.