VARIABLE TEMPERATURE AND DOSE ATOMIC LAYER DEPOSITION

A variable temperature and/or reactant dose atomic layer deposition (VTD-ALD) process modulates ALD reactor conditions (e.g., temperature, flow rates, etc.) during growth of a film (e.g., metallic) on a wafer to produce different film properties a different film depths.

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Bibliographische Detailangaben
1. Verfasser:	KUSE RONALD J
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A variable temperature and/or reactant dose atomic layer deposition (VTD-ALD) process modulates ALD reactor conditions (e.g., temperature, flow rates, etc.) during growth of a film (e.g., metallic) on a wafer to produce different film properties a different film depths.