Selective removal chemistries for semiconductor applications, methods of production and uses thereof

Removal chemistry solutions are described herein that include at least one sulfonic acid component having the formula: R-SO3H (Formula I) where R comprises at least one halo group, amino group, alkyl group, alkenyl group, alkynyl group or phenylamino group having the formula C6(NH2)H2XY, where X and Y may comprise at least one hydrogen, halo group, alkyl group, alkenyl group, alkynyl group, hydroxyl group, amino group or phenyl group. R may also comprise R1R2R3C, where R1, R2 and R3 may be the same or different and may comprise at least one hydrogen, halo group, alkyl group, alkenyl group, alkynyl group, hydroxyl group, amino group or aromatic group, and at least one solvent or solvent mixture. In some formulations, at least one fluoride source is added to the removal chemistry solution. In addition, methods are described herein of producing a removal chemistry solution that includes: providing the sulfonic acid component described above; providing at least one solvent or solvent mixture; and blending the at least one sulfonic acid component and the at least one solvent or solvent mixture to form the removal chemistry solution. In some formulations, at least one fluoride source is provided and blended with the at least one sulfonic acid component and the at least one solvent or solvent mixture to form a removal chemistry solution.