Test system incorporating a field effect transistor sensor
A test system in accordance with the invention includes a field effect transistor (FET) sensor that is operable to detect an electric field present in an area located adjacent to a sensor surface of the FET sensor and generate thereby, a change in the drain-source current of the FET sensor. The chan...
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creator | SCHROEDER DALE W DEPUE MARSHALL THOMAS |
description | A test system in accordance with the invention includes a field effect transistor (FET) sensor that is operable to detect an electric field present in an area located adjacent to a sensor surface of the FET sensor and generate thereby, a change in the drain-source current of the FET sensor. The change in drain-source current is typically detected by a current detector of the test system. |
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The change in drain-source current is typically detected by a current detector of the test system.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FREQUENCY-CHANGING ; NON-LINEAR OPTICS ; OPTICAL ANALOGUE/DIGITAL CONVERTERS ; OPTICAL LOGIC ELEMENTS ; OPTICS ; PHYSICS ; SEMICONDUCTOR DEVICES ; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080207&DB=EPODOC&CC=US&NR=2008029762A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080207&DB=EPODOC&CC=US&NR=2008029762A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SCHROEDER DALE W</creatorcontrib><creatorcontrib>DEPUE MARSHALL THOMAS</creatorcontrib><title>Test system incorporating a field effect transistor sensor</title><description>A test system in accordance with the invention includes a field effect transistor (FET) sensor that is operable to detect an electric field present in an area located adjacent to a sensor surface of the FET sensor and generate thereby, a change in the drain-source current of the FET sensor. 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subjects | BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF |
title | Test system incorporating a field effect transistor sensor |
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