Silicide block isolated junction field effect transistor source, drain and gate

Silicide block isolated junction field effect transistor source, drain and gate

An junction field effect transistor (JFET) is fashioned with a patterned layer of silicide block (SBLK) material utilized in forming gate, source and drain regions. Utilizing the silicide block in this manner helps to reduce low-frequency (flicker) noise associated with the JFET by suppressing the i...

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Bibliographische Detailangaben
Hauptverfasser: EL-KAREH BADIH, STEINMANN PHILIPP, YASUDA HIROSHI, BALSTER SCOTT GERARD, TROGOLO JOE R
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An junction field effect transistor (JFET) is fashioned with a patterned layer of silicide block (SBLK) material utilized in forming gate, source and drain regions. Utilizing the silicide block in this manner helps to reduce low-frequency (flicker) noise associated with the JFET by suppressing the impact of surface states, among other things.