USE OF CARBON CO-IMPLANTATION WITH MILLISECOND ANNEAL TO PRODUCE ULTRA-SHALLOW JUNCTIONS

Embodiments of the present invention include methods for forming an ultra-shallow junction in a substrate. In one embodiment, the method includes providing a silicon substrate, co-implanting the silicon substrate with carbon and a dopant to form a doped silicon substrate, and exposing the silicon substrate to a short time thermal anneal. In certain embodiments, the silicon substrate is exposed to a rapid thermal anneal after co-implanting the silicon substrate but prior to exposing the silicon substrate to a short time thermal anneal. In certain embodiments, the pre-amorphization implant is performed on the silicon substrate prior to implanting the silicon substrate with carbon and a dopant. In certain embodiments, the silicon substrate is a monocrystalline silicon substrate.