TITANIUM SEMICONDUCTOR BRIDGE IGNITER

A titanium semiconductor bridge igniter ( 10, 10 ') has a substrate ( 12, 12 ') on which is carried a pair of spaced-apart pads ( 18 a, 18 b) connected by a bridge ( 20 ). The pads ( 18 a, 18 b) and bridge ( 20 ) are made of a layer of polysilicon ( 22 ) or crystalline silicon ( 22 ')...

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Bibliographische Detailangaben
Hauptverfasser:	MARTINEZ-TOVAR BERNARDO, FOSTER MARTIN C
Format:	Patent
Sprache:	eng
Schlagworte:	AMMUNITION AMMUNITION FUZES ARMING OR SAFETY MEANS THEREFOR BASIC ELECTRIC ELEMENTS BLASTING CABLES CONDUCTORS ELECTRICITY EXPLOSIVE CHARGES, e.g. FOR BLASTING, FIREWORKS, AMMUNITION HEATING INSULATORS LIGHTING MECHANICAL ENGINEERING SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES WEAPONS
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Beschreibung
Zusammenfassung:	A titanium semiconductor bridge igniter ( 10, 10 ') has a substrate ( 12, 12 ') on which is carried a pair of spaced-apart pads ( 18 a, 18 b) connected by a bridge ( 20 ). The pads ( 18 a, 18 b) and bridge ( 20 ) are made of a layer of polysilicon ( 22 ) or crystalline silicon ( 22 ') covered by a layer of titanium ( 24 ). Metal lands ( 26 a, 26 b) overlie the pads ( 18 a, 18 b) but leave the bridge ( 20 ) exposed so that it can be placed in contact with an energetic material charge ( 42 ). A method of stabilizing the titanium semiconductor bridge igniter ( 10, 10 ') against temperature-induced variations in electrical resistance of bridge ( 20 ) includes heating the titanium semiconductor bridge igniter ( 10, 10 ') to an elevated temperature, e.g., from about 37° C. to about 250° C.