Method for manufacturing a semiconductor device including a crown-type capacitor
A method for forming a semiconductor device includes a plurality of crown-type capacitors in a capacitor-receiving insulating film, wherein bottom electrodes of the capacitors have an insulating spacer between each two of the bottom electrodes. The insulating spacer is formed by removing a hard mask...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method for forming a semiconductor device includes a plurality of crown-type capacitors in a capacitor-receiving insulating film, wherein bottom electrodes of the capacitors have an insulating spacer between each two of the bottom electrodes. The insulating spacer is formed by removing a hard mask used as an etching mask for forming cylindrical holes receiving therein capacitors including the bottom electrodes. |
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