METHOD OF FABRICATING NONVOLATILE MEMORY DEVICE

METHOD OF FABRICATING NONVOLATILE MEMORY DEVICE

In one embodiment, a nonvolatile memory device can be fabricated by forming first metallic dots on a charge storage film using first source gas, forming substitution dots on the charge storage film on which the first metallic dots are formed and forming second metallic dots using a second source gas...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CHEONG SEONG-HWEE, PARK JIN-HO, LEE BRAD H, LEE SANG-WOO, YANG SEUNG-GIL
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:In one embodiment, a nonvolatile memory device can be fabricated by forming first metallic dots on a charge storage film using first source gas, forming substitution dots on the charge storage film on which the first metallic dots are formed and forming second metallic dots using a second source gas.