Semiconductor device and method of manufacturing the same
The semiconductor device whose yield and reliability improved, and its manufacturing method are offered. A resist layer is formed so that the silicon nitride film and filling insulating film in region A may be covered. Then, in order to adjust the height position of the upper surface of a filling in...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The semiconductor device whose yield and reliability improved, and its manufacturing method are offered. A resist layer is formed so that the silicon nitride film and filling insulating film in region A may be covered. Then, in order to adjust the height position of the upper surface of a filling insulating film, a plasma etch back or fluoric acid is performed. Thereby, the filling insulating film on the silicon nitride film in region B is removed. Therefore, the problem that the residue of a filling insulating film remains on the silicon nitride film in region B is solved. |
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