Apparatus for Effecting Plasma Chemical Vapor Deposition (PCVD)

The present invention relates to an apparatus for carrying out a plasma chemical vapor deposition process by which one or more layers of doped or undoped silica can be deposited on the interior of an elongated glass substrate tube. The present invention further relates to a method for manufacturing...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	KORSTEN MARCO, VAN STRALEN MATTHEUS J.N, HARTSUIKER JOHANNES A, DECKERS ROB H.M
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention relates to an apparatus for carrying out a plasma chemical vapor deposition process by which one or more layers of doped or undoped silica can be deposited on the interior of an elongated glass substrate tube. The present invention further relates to a method for manufacturing an optical fiber using such an apparatus.