Developing method and method for fabricating semiconductor device using the developing method

In a developing method, a developer is supplied onto a resist film provided on a substrate, made of a resist and having an upper surface on which design patterns having different mask opening ratios are exposed and a development reaction is caused to proceed on the resist film with the supplied deve...

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Bibliographische Detailangaben
Hauptverfasser:	FUKUMOTO HIROFUMI, ASAHI KENICHI, KITAHARA HIDEKAZU, NODA KENJI, UJIMARU NAOHIKO
Format:	Patent
Sprache:	eng
Schlagworte:	ACCESSORIES THEREFOR APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY PHOTOGRAPHY PHYSICS
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Beschreibung
Zusammenfassung:	In a developing method, a developer is supplied onto a resist film provided on a substrate, made of a resist and having an upper surface on which design patterns having different mask opening ratios are exposed and a development reaction is caused to proceed on the resist film with the supplied developer. After the development, the substrate is rotated so that the developer and the resist dissolved in the developer are removed. Then, a rinsing solution is supplied onto the resist film subjected to development and the substrate is rotated, thereby washing out the developer and the resist dissolved in the developer. The rotation speed of the substrate in removing the developer is a half or less of the rotation speed of the substrate in the rinsing step of washing out the resist.