SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

A semiconductor device comprises an active region ( 4 ), a cladding layer ( 5,7 ), and a saturable absorbing layer ( 6 ) disposed within the cladding layer. The saturable absorbing layer comprises at least one portion ( 11 a) that is absorbing for light emitted by the active region and comprises at...

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Bibliographische Detailangaben
Hauptverfasser:	POOLE BRENDAN, HEFFERNAN JONATHAN, HOOPER STEWART E, ROSHAN RAKESH
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A semiconductor device comprises an active region ( 4 ), a cladding layer ( 5,7 ), and a saturable absorbing layer ( 6 ) disposed within the cladding layer. The saturable absorbing layer comprises at least one portion ( 11 a) that is absorbing for light emitted by the active region and comprises at least portion ( 11 b) that is not absorbing for light emitted by the active region. The fabrication method of the invention enables the non-absorbing portion(s) ( 11 b) of the saturable absorbing layer ( 6 ) to produced after the device structure has been fabricated. This allows the degree of overlap between the non-absorbing portion(s) ( 11 b) of the saturable absorbing layer ( 6 ) and the optical mode of the laser to be altered after the device has been grown.