Liquid Crystal Panel Using the Film Transistor and Manufacturing Methods of the Same

Liquid Crystal Panel Using the Film Transistor and Manufacturing Methods of the Same

The present invention generally relates to a liquid crystal panel using a thin film transistor and a manufacturing method thereof, and more specifically to a liquid crystal panel using a thin film transistor and a manufacturing method thereof for improving an opening ratio by forming a storage capac...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KIM HONG R, JANG SEOK P
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FREQUENCY-CHANGING
NON-LINEAR OPTICS
OPTICAL ANALOGUE/DIGITAL CONVERTERS
OPTICAL LOGIC ELEMENTS
OPTICS
PHYSICS
SEMICONDUCTOR DEVICES
TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:The present invention generally relates to a liquid crystal panel using a thin film transistor and a manufacturing method thereof, and more specifically to a liquid crystal panel using a thin film transistor and a manufacturing method thereof for improving an opening ratio by forming a storage capacitor under a channel. The present invention has suggested a method for effectively contacting an upper electrode for forming a capacitor with a lower electrode since the storage capacitor is located under the channel. Compared to a prior art in which one of storage capacitor electrodes is formed side by side with a channel of a thin film transistor, capacitor electrodes formed according to the present invention are located near to a substrate, thereby forming contact electrodes in many times without forming them one time.