STRUCTURE AND METHOD FOR THERMALLY STRESSING OR TESTING A SEMICONDUCTOR DEVICE

A structure is provided which includes at least one semiconductor device and a diffusion heater in a continuous active semiconductor area of a substrate. One or more semiconductor devices are provided in a first region of the active semiconductor area and a diffusion heater is disposed adjacent ther...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: MASSEY JOHN G, XIU KAI, KOLVENBACH KEVIN W, WANG PINGUAN, LA ROSA GIUSEPPE
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:A structure is provided which includes at least one semiconductor device and a diffusion heater in a continuous active semiconductor area of a substrate. One or more semiconductor devices are provided in a first region of the active semiconductor area and a diffusion heater is disposed adjacent thereto which consists essentially of a semiconductor material included in the active semiconductor area. Conductive isolation between the first region and the diffusion heater is achieved through use of a separating gate. The separating gate overlies an intermediate region of the active semiconductor area between the first region and the diffusion heater and the separating gate is biasable to conductively isolate the first region from the diffusion heater.