Semiconductor material having an epitaxial layer formed thereon and methods of making same

Semiconductor material having an epitaxial layer formed thereon and methods of making same

A semiconductor material having an epitaxial layer formed thereon and methods of forming an epitaxial layer on a semiconductor material are provided. The method includes disposing a masking layer and patterning the masking layer to form openings and growing an epitaxial layer through the openings an...

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Bibliographische Detailangaben
Hauptverfasser: SOLOVIEV STANISLAV I, ROWLAND LARRY B, ARTHUR STEPHEN D
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor material having an epitaxial layer formed thereon and methods of forming an epitaxial layer on a semiconductor material are provided. The method includes disposing a masking layer and patterning the masking layer to form openings and growing an epitaxial layer through the openings and over the masking layer where the epitaxial layer is coalescent.