RF POWER TRANSISTOR DEVICE WITH METAL ELECTROMIGRATION DESIGN AND METHOD THEREOF

RF POWER TRANSISTOR DEVICE WITH METAL ELECTROMIGRATION DESIGN AND METHOD THEREOF

An RF power transistor with a metal design ( 70 ) comprises a drain pad ( 72 ) and a plurality of metal drain fingers ( 74 ) extending from the drain pad, wherein at least one metal drain finger comprises one or more sections of metal ( 74 - 1, 74 - 2, 100 - 1, 100 - 2, 100 - 3 ), each section of me...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: PRYOR ROBERT A, DRAGON CHRISTOPHER P, BURGER WAYNE R
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An RF power transistor with a metal design ( 70 ) comprises a drain pad ( 72 ) and a plurality of metal drain fingers ( 74 ) extending from the drain pad, wherein at least one metal drain finger comprises one or more sections of metal ( 74 - 1, 74 - 2, 100 - 1, 100 - 2, 100 - 3 ), each section of metal including of one or more branch ( 54 - 1, 54 - 2, 116 - 1, 116 - 2, 116 - 11, 116 - 21, 116 - 41 ) of metal having a metal width maintained within a bamboo regime.