Nonvolatile memory device and method of forming the same
In a method of forming a nonvolatile memory device, and in devices formed according to the method, a hard mask used in patterning a stacked structure constituting a memory cell is simultaneously removed when a device isolation region is removed from a region of the substrate where a common source li...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | In a method of forming a nonvolatile memory device, and in devices formed according to the method, a hard mask used in patterning a stacked structure constituting a memory cell is simultaneously removed when a device isolation region is removed from a region of the substrate where a common source line is to be formed. |
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