Writing phase change memories
In accordance with some embodiments, the endurance of phase change memory cells may be increased. This increase may be accomplished with adequate margin by reducing the current used to write the reset state. Generally, that current will be a current less than the saturated current.
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | In accordance with some embodiments, the endurance of phase change memory cells may be increased. This increase may be accomplished with adequate margin by reducing the current used to write the reset state. Generally, that current will be a current less than the saturated current. |
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