THREE-DIMENSIONAL MULTI-GATE DEVICE AND FABRICATING METHOD THEREOF

A three-dimensional multi-gate device has a silicon fin, a gate structure, and a stress-adjusting layer. The gate structure contacts with three surface of the silicon fin to form a three-dimensional gate structure. The stress-adjusting layer is disposed on the gate structure to provide stress along the direction parallel to the channel length of the gate structure. The stress helps promote the mobility of the charges in the channel region under the gate structure and improve the electrical performance such as drive current and DIBL of the three-dimensional multi-gate device.