Method to Improve Time Dependent Dielectric Breakdown

Method to Improve Time Dependent Dielectric Breakdown

In the back end of an integrated circuit employing dual-damascene interconnects, the interconnect members have a first non-conformal liner that has a thicker portion at the top of the trench level of the interconnect; and a conformal second liner that combines with the first liner to block diffusion...

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Bibliographische Detailangaben
Hauptverfasser: FILIPPI RONALD G, IGGULDEN ROY C, MCGAHAY VINCENT J, WANG PINGUAN, WANG YUN-YU, DEMAREST JAMES J, KIEWRA EDWARD W, CHANDA KAUSHIK
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:In the back end of an integrated circuit employing dual-damascene interconnects, the interconnect members have a first non-conformal liner that has a thicker portion at the top of the trench level of the interconnect; and a conformal second liner that combines with the first liner to block diffusion of the metal fill material.