Production method for a FinFET transistor arrangement, and corresponding FinFET transistor arrangement

The present invention provides a production method for a FinFET transistor arrangement, and a corresponding FinFET transistor arrangement. The method comprises the following steps: provision of a substrate ( 106, 108 ); formation of an active region ( 1 ) on the substrate, said active region having a source region ( 114 ), a drain region ( 116 ) and an intervening fin-like channel region ( 113 b '; 113 b'') for each individual FinFET transistor; formation of a gate dielectric ( 11 ) and a gate region ( 13, 14, 15 ) over the fin-like channel region ( 113 b '; 113 b'') for each individual FinFET transistor; the formation of the fin-like channel region ( 113 b '; 113 b'') having the following steps: formation of a hard mask (S 1 -S 4 ) on the active region ( 1 ), said hard mask having a pad oxide layer ( 30 ), an overlying pad nitride layer ( 50 ) and nitride sidewall spacers ( 7 ); anisotropic etching of the active layer ( 1 ) using the hard mask (S 1 -S 4 ) for the formation of STI trenches (G 1 -G 5 ); filling of the STI trenches (G 1 -G 5 ) with an STI oxide filling ( 9 ); polishing-back of the STI oxide filling ( 9 ) as far as the top side of the hard mask (S 1 -S 4 ); etching-back of the polished-back STI oxide filling ( 9 ) as far as a residual height (h') in the STI trenches (G 1 -G 5 ); selective removal of the pad nitride layer ( 50 ) and the nitride sidewall spacers ( 7 ) with respect to the pad oxide layer ( 30 ), the etched-back STI oxide filling ( 9 ) and the active region ( 1 ) for the formation of a modified hard mask (S 1 '-S 4 '); anisotropic etching of the active layer ( 1 ) using the modified hard mask (S 1 '-S 4 ') for the formation of widened STI trenches (G 1 '-G 5 '), the fin-like channel regions ( 113 b '; 113 b'') of the active region ( 1 ) remaining for each individual FinFET transistor.